Abstract
Two-dimensional or three-dimensional numerical simulation on growth rate non-uniformity of selective area metalorganic vapor phase epitaxy in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Non-linear surface kinetics is introduced to analyse group-III precursor concentration dependency for the first time and surface reaction rate constant (ksn) of adsorbed species and adsorption equilibrium constant (K) are extracted from GaAs-MOVPE at 575 C. The effect of misorientation angle of GaAs (100) substrate on these kinetic parameters is examined. It is found that ksn is about 3.4×10-5 mol/m2/s independent of the angle, whereas K is 6.9-12×10-5 m3/mol dependent on the angle. The obtained value of ksn can be converted to lifetime of adsorbed species on GaAs surface and it is 0.3 sec. This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our non-linear kinetic analysis.
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