Abstract
Two-dimensional or three-dimensional numerical simulation on growth rate nonuniformity of selective area metallorganic vapor phase epitaxy (SA-MOVPE) in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Nonlinear surface kinetics is introduced to analyze group-III precursor concentration dependency of SA-MOVPE for the first time and surface reaction rate constant of adsorbed species and adsorption equilibrium constant are extracted from GaAs-MOVPE at . The effect of misorientation angle of GaAs(100) substrate on these kinetic parameters was examined. It was found that is about independent of ϕ, whereas ranged from dependent on ϕ. The obtained value of can be converted to lifetime of adsorbed species on GaAs surface and it is . This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our nonlinear kinetic analysis.
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