Abstract
In this work, we present a nonlinear silicon nitride waveguide. These waveguide are fabricated by readily available PECVD, conventional contact UV-lithography and high-temperature annealing techniques, thus dramatically reducing the processing complexity and cost. By patterning the waveguide structures firstly and then carrying out a high-temperature annealing process, not only sufficient waveguide thickness can be achieved, which gives more freedom to waveguide dispersion control, but also the material absorption loss in the waveguides be greatly reduced. The linear optical loss of the fabricated waveguide with a cross-section of 2.0 × 0.58 µm2 was measured to be as low as 0.58 dB/cm. The same loss level is demonstrated over a broad wavelength range from 1500 nm to 1630 nm. Moreover, the nonlinear refractive index of the waveguide was determined to be ~6.94 × 10-19 m2/W, indicating that comparable nonlinear performance with their LPCVD counterparts is expected. These silicon nitride waveguides based on a PECVD deposition platform can be useful for the development of more complicated on-chip nonlinear optical devices or circuits.
Highlights
Silicon nitride (SiN) has become more and more attractive as an important alternative to silicon for integrated nonlinear optical applications [1,2,3,4]
We demonstrate a nonlinear silicon nitride (SiN) waveguide. These waveguide are fabricated by readily available plasma-enhanced chemical vapor deposition (PECVD), conventional contact UV-lithography and high-temperature annealing techniques, which dramatically reduces the processing complexity and cost
The developed and optimized processes, can be utilized as an feasible and promising alternative to fabricate SiN waveguides with sufficient thickness, which allows more freedom on dispersion engineering in nonlinear applications
Summary
Silicon nitride (SiN) has become more and more attractive as an important alternative to silicon for integrated nonlinear optical applications [1,2,3,4]. To obtain optical devices with good performances both in linear or nonlinear regime, SiN film with high quality is firstly required. It can be deposited either by low pressure chemical vapor deposition (LPCVD) or by plasma-enhanced chemical vapor deposition (PECVD). LPCVD can provide SiN film with good homogeneity both in thickness and material quality It involves high deposition temperature (in general 700-900 °C) and its growth rate is rather low. We present a nonlinear SiN optical waveguide These waveguides are fabricated by readily available PECVD, conventional contact UV-lithography and hightemperature annealing techniques, dramatically reducing the processing complexity and cost. The proposed fabrication process provides a feasible and promising alternative for the development of on-chip nonlinear optical devices or circuits using SiN photonics by PECVD deposition platform
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