The role of primary recrystallization microstructure in secondary recrystallization of Goss grain in industrial low-temperature grain-oriented silicon steel

Abstract

Low-temperature grain-oriented silicon steel has very excellent magnetic properties along the rolling direction. During industrial mass production, slight process fluctuations can directly lead to variations in the primary recrystallization microstructure, which in turn can have a dramatic effect on the magnetic properties of the final product. However, it is unclear how different primary recrystallization microstructures influence the magnetic properties of the industrial final products, making it difficult to further optimize the production process of industrial low-temperature grain-oriented silicon steel. Therefore, it is very important to clarify the transformation behavior of different primary recrystallization microstructures and their influences on the transformation behavior of inhibitors during the high-temperature annealing process. Here, we analyzed the differences between two primary recrystallization microstructures in terms of microstructure homogeneity, Goss grain characteristics and texture characteristics and investigated the secondary recrystallization behavior of Goss grains and the dissolution behavior of inhibitors in these two primary recrystallization microstructures during high-temperature annealing. Based on the results of this work, it was found that a finer primary recrystallization microstructure could be more favorable to the formation of a sharp Goss texture, which in turn could significantly improve the magnetic properties, and in addition, new insights into the transformation behavior and the grain boundary pinning behavior of inhibitors during high-temperature annealing process were established. The results of this work could help to further improve the understanding of the actual role of inhibitors during high-temperature annealing and could also provide new ideas for further improving the industrial production process.