Abstract
The influence of the configuration of the active region in the semiconductor laser on self-focusing (SF) is considered for bulk, waveguide and non-guide geometries. SF is assumed as the cause of the power limitation for obtaining a high quality laser beam, as it leads to a spatial beam instability and to a profile deformation. The power limits are estimated using one- and two-dimensional models. It is shown that the limit is rather low in the waveguide case but it may be enhanced by designing a non-guide geometry composite device with the active region sufficiently short as compared to a passive gap included in the cavity. A single-pass SF condition and small-scale disturbances are also discussed. For some non-guide geometries the output power is predicted in the multi-kilowatt range before SF occurence
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