Abstract
Two-dimensional layered materials have caught considerable attention for their intrinsic value. Much effort has been made to excavate novel 2D materials with more distinctive characteristics as optical modulators. Single-crystal indium selenide (In2Se3) film with few layers fabricated by molecular beam epitaxy method, for the first time, is employed in this study as a saturable absorber for an Nd3+ doped Gd:GdYNbO infrared laser. Our experimental results demonstrate that the high-quality In2Se3 film achieves a desirable modulation depth of 18.4%, but only 5.9% for the LPE one. The shortest pulse duration and maximum single pulse energy of In2Se3 film are both much better than those of MoS2 and WS2 films in the same laser system. It further confirms the distinguishing properties of the MBE-growth In2Se3 film for optical modulation in infrared region.
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