Abstract
Taking the strong built-in electric field into consideration, the optical-rectification (OR) coefficient in a nitride semiconductor coupling quantum well (CQW) has been theoretically investigated by using the compact density matrix approach. The electronic eigenstates in a nitride CQW are exactly solved based on the built-in electric field model already constituted in the recent reference. Numerical calculations on the typical GaN / InxGa1-xN CQW are performed. The calculated results reveal that the OR coefficients of the CQW are not monotonic functions of the well width, barrier width, and the doped concentration of the CQW systems but have complicated dependent relations on them. Our calculation shows that a strong OR effect can be obtained in the nitride CQW by choosing optimized structural parameters and a relatively low doped fraction.
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