Abstract
The nonlinear optical properties of, and phase conjugation in, the bulk semiconductor GaSb were investigated at 2.1 µm by use of the Z-scan and the degenerate four-wave mixing techniques. Measurements were also carried out near the fundamental bandgap of the quaternary compound Ga0.87In0.13As0.11Sb0.89. Z-scan measurements as a function of sample temperature, in conjunction with theoretical modeling, identified the predominant sources of the medium nonlinearity to be nonequilibrium free carriers generated through two-photon absorption in GaSb, while it is saturation of real transitions near the fundamental band edge in Ga0.87In0.13As0.11Sb0.89 that was identified as the primary cause of this nonlinearity. Degenerate four-wave mixing phase-conjugate reflectivity of as much as 14% has been achieved in GaSb.
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