Abstract

Degenerate four-wave mixing (DFWM) experiment is performed to obtain light wavefront inversion (phase conjugation) in semiconducting chalcogenide thin films. Third order nonlinearity of amorphous Znx–Sy–Se100−x−y chalcogenide thin films using DFWM technique is studied at second harmonic of Nd:YAG laser. Influence of total input irradiance on phase conjugate signal is deliberated using log–log plot that has a slope of three and hence implies third order nonlinearity. The dependence of phase conjugate signal on forward beam and backward beam is also studied. The period of the grating formed by interference of forward and probe beam is determined. As the temporal overlapping and sample thickness conditions are satisfied, the third order nonlinear susceptibility, figure of merit and nonlinear refractive index of amorphous films are estimated. The nonlinear behavior is analyzed in terms of decrease in band gap with increasing Zinc and decreasing Sulfur content.

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