Abstract
SUMMARYIn this paper, a nonlinear model of a commercial 10‐W laterally diffused metal oxide semiconductor (LDMOS) transistor for FM transmitters is identified. It is based on high‐frequency small‐signal measurements for the identification of both the parasitic network and the strictly nonlinear dynamic effects, whereas low‐frequency large‐signal measurements are exploited for the description of the dynamic I/V characteristics of the device above the cut‐off of low‐frequency dispersion. A validation of the proposed model is provided by using time‐domain nonlinear measurements carried out at 40 MHz and 100 MHz. Copyright © 2013 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
