Abstract
We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique. We probe at a wavelength of 1035 nm and with a sub-picosecond pulse duration. The measured n2 was within the range of $- {5.6}\times \,\, {10}^{- {13}}$ cm $^{ {2}}$ /W $ cm2/W.
Highlights
S EMICONDUCTOR disk lasers (SDLs), known as vertical-external-cavity surface-emitting lasers (VECSELs), have been the subject of considerable interest in recent years due to flexibility in their design and low cost
We characterize the nonlinear lens in an antiresonant 11 quantum well InGaAs/GaAsP semiconductor disk laser gain structure designed for operation at 1035 nm using a reflection-type z-scan technique
The structure must be probed at a wavelength on resonance with the quantum well emission, where the semiconductor disk laser (SDL) gain chip would naturally lase, and with a pulse duration that is comparable to reported self mode-locking (
Summary
S EMICONDUCTOR disk lasers (SDLs), known as vertical-external-cavity surface-emitting lasers (VECSELs), have been the subject of considerable interest in recent years due to flexibility in their design and low cost This has led to steady improvements in average powers up to 106 W [1] in continuous-wave (CW) operation and kilowatt peak powers in mode-locked (ML) operation with sub-picosecond pulse durations typically at gigahertz repetition frequencies [2], [3]. SDL gain chips are multilayer structures with scope for large variation in composition, thickness and number of layers The complexity of their design makes modeling the nonlinear response challenging. The structure must be probed at a wavelength on resonance with the quantum well emission, where the SDL gain chip would naturally lase, and with a pulse duration that is comparable to reported self mode-locking (
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