Abstract
Potential, ionized impurity, and free carrier distributions are investigated for Schottky junction under a reverse bias with an alternating component which is large compared to k B T/ q. Nonlinear effects in the junction behavior are considered in the framework of a general large signal model as well as is in the framework of a second-order model. Free carrier distribution is assumed to be an equilibrium one and impurity ionization is treated using Shockley–Read–Hall statistics. It is shown that in the large-signal case potential, ionized impurity, and free carrier distributions are significantly different from the corresponding small-signal distributions. The proposed second-order model is shown to be accurate for the values of the fundamental of ac potential which are less or approximately equal to k B T/ q.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
