Abstract
We numerically investigate the nonlinear dynamic properties of an exclusive excited-state (ES) emission quantum dot (QD) laser under optical injection. The results show that, under suitable injection parameters, the ES-QD laser can exhibit rich nonlinear dynamical behaviors, such as injection locking (IL), period one (P1), period two (P2), multi-period (MP), and chaotic pulsation (CP). Through mapping these dynamic states in the parameter space of the frequency detuning and the injection coefficient, it can be found that the IL occupies a wide region and the dynamic evolution routes appear in multiple forms. Via permutation entropy (PE) calculation to quantify the complexity of the CP state, the parameter range for acquiring the chaos with high complexity can be determined. Moreover, the influence of the linewidth enhancement factor (LEF) on the dynamical state of the ES-QD laser is analyzed. With the increase of the LEF value, the chaotic area shrinks (expands) in the negative (positive) frequency detuning region, and the IL region gradually shifts towards the negative frequency detuning.
Highlights
For a quantum dot (QD) laser emitting solely in the GS, Erneux et al have theoretically and experimentally investigated its dynamic response under optical injection, and the results show that the laser has similar dynamic features to the Class A laser [23]
For a QD laser emitting solely in the ES under high bias currents, a tunable all-optical gating has been implemented after introducing optical injection [28], and the hysteresis phenomenon has been observed by scanning the injection power along different variation routes [29]
(=NES /4NB ) represent the occupancy probabilities of carriers in GS and ES, where NB denotes the total to the probabilities of empty QD state in GS and ES
Summary
Semiconductor lasers (SLs) can exhibit various nonlinear dynamical behaviors, such as the period one (P1), period two (P2), multi-period (MP), and chaos (CO) etc. [1,2,3,4,5], which has attracted much attention due to their potential applications in photonic microwave amplifiers [6], optical frequency converters [7], wireless optical fiber communication [8], all-optical logic gates [9], laser Doppler velocimeters [10], secure optical communication, and random bit generation [11,12,13]. Under a relatively low bias current, the recombination of electrons and holes in the ground-state (GS) results in sole GS emission. For a QD laser emitting solely in the GS, Erneux et al have theoretically and experimentally investigated its dynamic response under optical injection, and the results show that the laser has similar dynamic features to the Class A laser [23]. For a QD laser emitting solely in the ES under high bias currents, a tunable all-optical gating has been implemented after introducing optical injection [28], and the hysteresis phenomenon has been observed by scanning the injection power along different variation routes [29]. The mapping of the dynamical states in the parameter space of frequency detuning and the injection coefficient is presented, and the effect of the linewidth enhancement factor (LEF) on the nonlinear dynamics of ES-QD lasers is discussed
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