Abstract
The effects of applied dc bias field, temperature, frequency, and doping types on the nonlinear dielectric behaviors of Bi0.5(Na0.82K0.18)0.5TiO3 piezoelectric films with thickness of 40 μm have been investigated. It is demonstrated that the dielectric permittivity versus ac field amplitude departed from linearity at high temperature, which is caused by a decrease of the coercive field with increasing temperature. The frequency dependence of the dielectric permittivity is related to domain wall pinning. The thicker piezoelectric films exhibit higher extrinsic contribution due to high domain wall mobility and less domain wall pinning, resulting from the increased grain size and film thickness.
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