Nonlinear Charging and Transport Times in Doped Nanotubes Junctions

Abstract

The nonlinear capacitance in doped nanotube junctions is calculated self consistently. A negative differential capacitance is observed when the applied bias becomes larger than the pseudogap of the metallic armchair nanotube. For this device, one can deduce a relaxation time of approximately 0.1 fs. Because of its negative differential resistance (NDR), a switching time of less than a femtosecond, i.e., at least three orders smaller than present-day switching times, can also be estimated. This effect is important in designing ultrafast nano-electronic components.