Abstract
The model previously proposed by the authors for taking into account the polarization spatial distribution effect on the grain boundary barriers screening is used for description of a number of nonlinear charge transport phenomena in polycrystalline ferroelectric-semiconductors. Computer simulation has shown that this model enables adequate description of effects due to the transport of both equilibrium (PTCR and varistor effects) and nonequilibrium (photogalvanic and even field current effects) charge carriers.
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