Abstract
AbstractNonlinear emission characteristics of (111)‐oriented diamond p–i–n junction light‐emitting diodes (LEDs) were investigated. We measured the superlinear increase of excitonic emission and sublinear increase of deep‐level emission due to defects and/or impurity centers depending on injected current at room temperature (RT). These characteristics could not be explained by conventional carrier trapping and recombination processes at deep levels based on simple Shockley–Read–Hall statistics. We introduced three‐step processes of carrier trapping and recombination at charged deep levels via bound states, where the bound states are stable even at RT because of low dielectric constant in diamond. Rate equation analysis based on this concept simultaneously explained the superlinear increase of excitonic emission and sublinear increase of deep‐level emission for diamond LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
