Abstract
This letter presents the nonlinear analysis of a microwave p-i-n diode limiter using a finite-difference time-domain (FDTD) field-circuit simulator based on physical models, rather than an equivalent circuit in circuit simulation. The corresponding flat leakage power is simulated and analyzed at frequencies of 2.45 and 2.8 GHz, as well as at different ambient temperatures. Simulation results were in good agreement with experimental measurements, showing that the improved FDTD simulator can accurately model the “power jump” in flat leakage power curves as well as the effects of temperature on the p-i-n diode limiter.
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