Abstract

Based on the equivalent circuit model and physical model, a new method for analyzing diode electrical characteristics based on a neural network model is proposed in this paper. Although the equivalent circuit model is widely used, it cannot effectively reflect the working state of diode circuits under the conditions of large injection and high frequency. The analysis method based on physical models developed in recent years can effectively resolve the above shortcomings, but it faces the problem of a low simulation efficiency. Therefore, the physical model method based on neural network acceleration is used to improve the traditional, equivalent circuit model. The results obtained from the equivalent circuit model and the physical model are analyzed using the finite-difference time-domain method. The diode model based on a neural network is fitted with training data obtained from the results of the physical model, then it is summarized into a voltage–current equation and used to improve the traditional, equivalent circuit method. In this way, the improved equivalent circuit method can be used to analyze the working state of a diode circuit under large injection and high frequency conditions. The effectiveness of the proposed model is verified by some examples.

Highlights

  • In recent years, with the development of integrated circuit technology, semiconductor devices have played more important roles

  • The results show that the improved equivalent circuit method can better reflect the diode electrical characteristics under large injection conditions and high frequency

  • In this paper, a novel simulation method based on a hyperbolic tangent basis function neural model (HTBF) neural network was proposed based on the existing analysis methods for diode electrical characteristics

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Summary

Introduction

With the development of integrated circuit technology, semiconductor devices have played more important roles. Traditional nonlinear circuits with semiconductor devices are solved by means of equivalent circuits [1]. Common equivalent components include resistance, capacitance, controlled current source, and a controlled voltage source. Circuit solvers based on the equivalent circuit model are widely used in commercial software such as ADS [2,3]. The equivalent circuit method can be used in many application scenarios, such as in low-frequency and DC conditions, but becomes inaccurate at high frequencies. It does not consider a device’s working state under extreme conditions, such as with high-power injection or irradiation; as an approximate scheme, it cannot accurately reflect the physical mechanism of the device

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