Abstract
Capacitance-voltage characteristics of Hg-InP Schottky barrier diodes are compared with those of Au-InP Schottky diodes. We show that the Hg-InP Schottky diode may be used as a sensitive, relatively nondestructive probe of the InP surface. In contrast, electronic analysis of Au-InP Schottky barrier diodes yields information about the InP surface after it has been altered in the evaporation process. Using Hg-InP Schottky diodes, thin insulating layers have been detected on InP exposed to wet chemical etchants, and surface charge has been detected on InP exposed to very low energy Ar plasmas.
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