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Abstract
Analytical expressions are given for noise in FETs due to charge trapping at defects in the silicon and in the oxide. Conditions which lead to 1 ƒ and 1 ƒ 2 spectra are described. A new physical model of the noise mechanisms in ideal depletion mode MOSFETS is fully described. Measurements on various MOSFETs in CCDs and other systems are compared with the predictions of the model. The results show that MOSFETS in CCDs exhibit much higher 1 ƒ noise than predicted. The possible reasons for this excess noise as well as the significance of these findings on charge transfer efficiency are discussed.
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