Monte Carlo model for describing charge transfer in irradiated CCDs

Abstract

Radiation exposure of CCD devices degrades the charge transfer inefficiency (CTI) by the creation of electron trap sights within the bulk silicon. The presence of electron traps tend to smear the signal of a point-like image. This affects CCDs used in star trackers where sub-pixel centroiding is required for accurate pointing knowledge. To explore the effects of radiation damage in CCD devices, we have developed a Monte-Carlo model for simulating charge transfer in buried channel CCDs. The model is based on the Shockley-Read-Hall generation-recombination theory. The CTI in CCD devices was measured before and after exposure to mono-energetic 61 MeV protons. Our data show that displacement damage in the bulk silicon increases the CTI of the CCD device. CTI was measure don irradiated CCD devices at various temperatures form -10 to -150 C, thus providing estimates of the electron trap energy levels created in the CCD silicon. The dominate post-radiation rap energy level was the silicon E-center found to be at an energy of 0.46 eV, which is in good agreement with other published values. To fit our data over the complete temperature range, we also required electron traps of 0.36 eV and 0.21 eV. Our model also includes the effects of charge cloud growth with signal volume and clocking rates of the CCD device. Determining the types and levels of radiation a CCD device will encounter during its operational life is very important for choosing CCD operating parameters.