Abstract
AbstractThe theory of the surface space charge region has been generalized to the case of non‐equilibrium conditions and arbitrary occupation of local centres within the band gap. The contribution of different local levels to the non‐equilibrium surface charge has been analysed in detail. Non‐equilibrium surface effects (capacitance, field‐effect, barrier photovoltage) are calculated for the model considered which is often realized at low temperatures and in broad band gap semiconductors (GaAs, CdS etc.).
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