Abstract
Results for interband and intraband absorption and emission in quantum dot structures are presented The observed peaks correspond to interband electron transitions between ground and excited states of QDs. Near infrared (λ ≃ 1 μm) lasing was obtained at high intensities of excitation. Surface mid infrared (λ > 10 μm) photoluminescence connected with the intraband electron transitions between the states of wetting layer and the ground states in QDs was also studied.
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