Abstract
The chapter starts by emphasizing the importance of decoupling transistor current gain from non-equilibrium electron transport. The dielectric response of a majority p-type carrier system to a probe electron in the conduction band is then analyzed in terms of valence band excitations. Experimentally measured non-equilibrium electron transport across the base of a heterostructure bipolar transistor is described, followed by calculation of non-equilibrium minority carrier scattering rates. An important phase-space argument is introduced to explain a reduction in calculated non-equilibrium scattering rate with increasing, and very high, majority carrier concentration. The chapter concludes by describing the influence that non-equilibrium electron transport has in determining the design of a high-performance heterostructure bipolar transistor.
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