Abstract
A new technique called microwave DLTS is developed and proven to be a powerful method for the characterization of deep levels in semi-insulating GaAs wafers. Because this new technique is essentially nondestructive and contactless, it is quite suitable for the direct characterization of GaAs wafers for IC fabrication processes. Using microwave DLTS, density distributions of EL2 in undoped semi-insulating GaAs wafers were measured nondestructively.
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