Abstract

A simple non-destructive technique using an i.r. spectrophotometer is described which detects accurately the presence of the phosphosilicate layer in the oxide structure on wafers used in fabricating silicon semiconductor devices. By comparing differences in phosphorus oxide thickness on the basis of absorption characteristics, this technique can be used to monitor the phosphorus content and, subsequently, reduce the failure incidence due to inversion in diodes and npn transistors.

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