Nondestructive Detection and location of TSV-TGV Heterogeneous Interconnection Based on Frequency-Domain Transmission Characteristics

Abstract

In three-dimensional integrated circuit, through-silicon via(TSV) are often used together with through-glass vias (TGV) based interposers to achieve vertical interconnection of different functional modules. Since the accuracy of fabrication process is not ideal enough, a variety of defects such as short defect and open defect will occur. Thus, noninvasive defect analysis method is urgently needed to promote the yield of product. In this paper, a nondestructive defect analysis and localization method for a 4-layer TSV-TGV heterogeneous interconnection is extracted based on the frequency-domain transmission characteristics. According to the characteristics of |S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> |, |S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> |and |S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">31</sub> |, one can estimate whether there is open or short defect. Besides, defects can be located according to the characteristics of the minimum value of S parameters. The conclusions provide important reference for nondestructive detection of TSV-TGV heterogeneous interconnection.