Nondestructive Defect Detection and Localization of Defects in Annular Through Silicon Via(TSV)

Abstract

In the non-ideal manufacturing process of Through Silicon Vias (TSV), many factors including nonuniform filling, not completely chemical mechanical polishing, tilted vias will lead to open defect, short defect and voids. These defects are more likely to occur in annular TSV(A-TSV) since its conductor contact surface is smaller. In this paper, impacts of open and short defects on time domain characteristics of the Ground-signal-signal-Ground (GSSG) type annular TSV are analyzed, and a nondestructive defect analysis method is proposed to distinguish open defect, short defect between signal channels and short defect between signal and ground channels. In addition, methods to locate the open defect and short defect between signal lines are also extracted. These conclusions provide an effective method for annular TSV nondestructive testing.