Abstract

ABSTRACTThe electrical and optical properties of the heterostructure interface between high resistivity ZnSe and the semi-insulating GaAs substrate have been investigated using Transverse Acoustoelectric Voltage (TAV) spectroscopy. From the TAV spectra and the relative change of the TAV amplitude (ΔTAV/TAV), we have found the carrier type and concentration of ZnSe as well as the energy levels of various trap states at the heterostructure interface. The spectral behavior of the ΔTAV/TAV curves varied for samples of different ZnSe epilayer thickness. From the measurements, the surface recombination velocities (SRV's) were calculated. For the pseudomorphic ZnSe films on GaAs, a reduction in the SRV's was measured. As the thickness of the ZnSe film was increased, the various ΔTAV/TAV indicated presence of a large number of interface states due to the introduction of misfit dislocations.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.