Abstract
This article discusses the issue of noise measurements application for the quality assessment of the solar cells themselves and production technology alike. The main focus of our research is the random n-level (in most case just two-level) impulse noise, usually referred to as microplasma noise. This noise was found to be in a direct consequence of local breakdowns in micro-sized regions and brings about a reduction of lifetime or a destruction of the pn junction. Non-destructive measurement methodology as presented here is suitable for testing of a large number of various semiconductor devices not only for solar cells. In this paper experimental measurement of noise signals in the frequency and time domain is presented. Furthermore the microplasma noise behaviour and defect geometry is discussed.
Highlights
Silicon solar technology is most widespread and production process is relatively cheap, the low efficiency and production cost are still central problems of photovoltaics systems
Summary Our research deals with the non-destructive testing of the silicon solar cells
We carried out number of experiments related to the meso-scale and mirco-scale defect regions
Summary
Silicon solar technology is most widespread and production process is relatively cheap, the low efficiency and production cost are still central problems of photovoltaics systems. The A-type noise usually appears at sufficiently high reverse voltage, yet lower than the breakdown voltage of the complete defect-free junction regions, and it is caused by avalanche ionization breakdown. The Microplasma noise appears as a result of local defects with positive temperature dependence of breakdown (critical) voltage, UBR, as depicted in
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