Abstract
In this study, we combined x-ray topography (XRT) and birefringence imaging to identify the Burgers vectors in threading mixed dislocations (TMDs) in SiC. XRT was utilized to determine the screw components of the Burgers vectors, while the edge components were ascertained using birefringence images obtained by polarized light microscopy. Our analysis, validated against transmission electron microscopy and large-angle convergent beam electron diffraction, provides a novel, nondestructive approach for examining defects in SiC power devices. The results demonstrate a significant advancement in the characterization of TMDs, contributing insights into enhancing the quality and reliability of semiconductor devices. This research paves the way for future developments in SiC technology, highlighting the importance of a detailed dislocation analysis in the field of semiconductor materials.
Published Version
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