Abstract
An infrared photothermal radiometric (PTR) method has been applied to the SiO 2/Si interface noncontact diagnostics. Both photothermal frequency-domain (PTR-FD) and photothermal deep-level transient spectroscopy (PTR-DLTS) analyses have been performed on two full-size Si wafers containing Al and poly-Si gated MOS structures. A new fitting procedure which uses both the PTR-FD amplitude and phase frequency responses is proposed allowing the measurements of the values of the carrier diffusivity, lifetime and surface recombination velocity. A behavior consistent with photoinjected carrier lifetime enhancement due to trap thermal filling at elevated temperatures has been observed on both wafers. The activation energies measured by the two photothermal techniques are found to be close: 0.15–0.17 eV and 0.21 eV below the bottom of the conduction band for Al-gated and poly-Si gated wafers, respectively.
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