Abstract
Laminar-flow polishing is a noncontact polishing technique capable of producing a highly polished surface with no subsurface mechanical damage. The method utilizes the hydrodynamic condition of laminar flow to provide the transport mechanisms responsible for the removal of the GaAs surface. The method is well suited to the preparation of semiconductor wafers for experiments where high-quality damage-free substrates are required. In addition, the ease of controlling the polishing conditions makes this method a useful technique in production where a high throughput of wafers with uniform and damage-free surfaces are essential.
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