Abstract
The Ohmic nature of the nonalloyed metal contact on molecular beam epitaxial GaAs grown at 200 °C was studied. The specific contact resistances at room temperature and 120 K were 1.5×10−3 and 7.0×10−1 Ω cm2, respectively. These values are anomalously low considering that the conduction-band electron concentration in this material is less than 1011 cm−3 at room temperature. The experimental results indicate that the carrier transport at the metal/semiconductor interface is dominated by a dense (∼3×1019 cm−3) EL2-like deep donor band, rather than the usual conduction band.<squeeze;1.6p>
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