Abstract
Studying the transport properties via Hall and resistivity measurements of low-temperature molecular-beam epitaxy (LT-MBE) GaAs samples, the optimal conditions for fabricating high-resistivity material are found. We present results on three LT-MBE GaAs samples grown at 215, 265, and 315 °C. The measurements were carried out at temperatures ranging from 130 to 300 K, and the hopping conduction mechanism in this range is identified as variable range hopping. The sample grown at 315 °C presents the highest hopping parameter; this appears to be due to a reduction in the density of hopping centers. The mechanisms responsible for this are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
