Abstract
The current mainstream, based on the Flash technology, is expected to be the reference technology also for the next few years. Nevertheless Flash has technological and physical constraints that make more difficult their further scaling. In this contest there is the industrial interest for alternative technologies that exploit new materials and concepts to go beyond the Flash technology, to allow better scaling, and to enlarge the memory performance. The main emerging non-volatile memory technologies based on inorganic material, like ferroelectric memory (FeRAM), magnetoresistive memory (MRAM) or phase change memory (PCM) and the main innovative concepts based on organic material like ferroelectric or conductance switching polymer will therefore be analysed. We will then focus the attention on PCM technology as one of the best candidate as next-decade non-volatile memory technology, covering the main characteristics and presenting the latest development results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
