Abstract
Resistive RAMs are one of their kinds of non-volatile storage, which works by changing the resistance of the capacitive structure. Here, using an Au/ZnFe2O4/FTO (fluorine-doped tin oxide) resistive switching device, we present the Resistive Switching (RS) characteristics of nanostructured ZnFe2O4 (ZFO) films. The selection of ZFO which pertains to spinel structure, has been done due to its unique magnetic, chemical, and thermally stable semiconducting properties. For this work, ZFO nanoparticles were synthesized using hydrothermal technique. The synthesized ZFO nanoparticles were spray coated on FTO substrate and top Gold (Au) electrodes were deposited to fabricate Au/ZFO/FTO capacitor-type resistive switching device.
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