Abstract
A process for deposition of tetragonal Cu2SnS3 (CTS) thin films from methanolic precursor solution of metal-thiourea complex by direct liquid coating (DLC) is described. For synthesis of CTS films, precursor films are first deposited by dip-coating and then thermolysed at 200°C in air for 10min. Formation of tetragonal Cu2SnS3 is confirmed by X-ray Diffraction (XRD). X-ray Photoelectron Spectroscopy (XPS) disclosed that Cu and Sn are in oxidation states +1 and +4, respectively. The films are smooth and homogenous with roughness (RMS) of 1–2nm as revealed by atomic force microscope (AFM) and scanning electron microscopy (SEM). Optical studies show that the energy band gap (Eg) of Cu2SnS3 is 1.12eV and absorption coefficient (α) is >105cm−1. The films are p-type with electrical conductivity (σ) of 0.5S/cm. The concentration and mobility of holes are about 1018cm−3 and 1cm2/V/s, respectively as determined from Hall measurement. The variation of conductivity in the temperature range 5 to 290K can be explained by considering a combination of Mott variable range hopping, nearest neighbour hopping and thermionic emission over GB barriers as conduction mechanism. Non-toxic thin film solar cell (TFSC) of graphite/Cu2SnS3/ZnO/ITO/SLG are fabricated by DLC which had power conversion efficiency (PCE) of 2.10% with open circuit voltage, short circuit current and fill factor of 0.816V, 6.14mA/cm2, 0.42, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
