Abstract
Cu2SnS3 (CTS) thin film solar cell with power conversion efficiency (PCE) of 2.39% is fabricated using sputtered metallic Cu/Sn stacked precursors subjected to sulfurization. The crystal structure, phase purity, atomic composition, oxidation state, external quantum efficiency, optical and electrical properties of the thin films are characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, X-ray fluorescence (XRF) spectroscopy, X-ray photoelectron spectroscopy (XPS), a quantum efficiency study, UV–visible and a hall measurement system, respectively. The influence of various Cu deposition time on the structural, compositional and microstructural properties as well as on the device performance of CTS thin films are evaluated. It is found that the properties of CTS thin films are strongly dependent on the Cu deposition time during the sputtering process. The Cu deposition time is varied from 2812 s to 3212 s, and the film deposited at 2812 s showed the highest power conversion efficiency (PCE) of 2.39% with an open circuit voltage (Voc) of 208 mV, a short circuit current density (Jsc) of 28.92 mA/cm2 and a fill factor (FF) of 39.7%.
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