Abstract
It has been clarified that several peculiarities of I-V characteristics at U < 1.5 V and low frequency noise dependences in InGaN/GaN nanostructures for green and blue spectral range as well as in Schottky barriers in AlGaN/GaN HEMT nanostructures are evoked by the non-radiative coupled deep donor-acceptor pair recombination. The strong contribution of the non-radiative donor-acceptor recombination in the degradation of the nanostructures properties has been confirmed experimentally.
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