Abstract
Deep defect states of Cadmium Telluride deposited via close space sublimation and magnetron sputtering are evaluated via steady state and time resolved photoluminescence. Intensity dependent photoluminescence measurements for as-grown and cadmium chloride treated samples reveal the recombination mechanism associated with each transition. The as-grown sputtered film photoluminescence is weak with broad features while the close space sublimation film photoluminescence is comparatively bright and dominated by a deep donor acceptor pair recombination. Unlike excitonic or free-to-bound transitions, donor acceptor pair recombination exhibits a distance dependence that determines the distribution of transition energies and recombination rates. We measure the PL lifetime with respect to energy as a direct observation of the increasing donor acceptor pair recombination rate with decreasing donor-acceptor separation.
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