Abstract
The functional dependence of the magnitude of a.c. photo currents arising in charge neutral regions of silicon integrated photodiode detectors is studied by way of numerical small signal analysis. The analysis shows for typical integrated structures, which are compatible with standard bipolar transistor technology, that a significant portion of the a.c. photo current is generated within the surface and buried quasi-neutral layers and must be taken into account for complete a.c. characterization of the diode. A simple non-quasi-static expression is developed which is shown by comparison with a.c. numerical simulation to accurately model the response of the photo current from neutral regions to light signal modulation frequency.
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