Abstract
For improving the productivity of the semiconductor silicon carbide power devices, a very large diameter wafer process was studied, particularly for the non-plasma wafer etching using the chlorine trifluoride gas. Taking into account the motion of heavy gas, such as the chlorine trifluoride gas having the large molecular weight, the transport phenomena in the etching reactor were evaluated and designed using the computational fluid dynamics. The simple gas distributor design for a 200-mm-diameter wafer was evaluated in detail in order to uniformly spread the etchant gas over the wide wafer surface.
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