Abstract
The spin-doublet splitting and effective-mass shift of the cyclotron resonance in n-GaAs has been studied in high static magnetic fields applied along the (001), (011) and (111) crystal directions. A clear anisotropy of the conduction band has been observed in the orientation dependence of the spin-doublet splitting. The experimental results are described using a five-level k·p model. Comparison between the experimental data and this theoretical model allowed the determination of important band-structure parameters for GaAs, such as the interband momentum matrix element Q .
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