Abstract
A suppression of the emitter crowding effect has been studied in a tunnel MOS emitter Auger transistor. The redistribution of the potential of an induced base along the emitter occurs through the activation of an intrinsic source of minority carriers—Auger ionization caused by injected electrons. Non-one-dimensional effects arising from the Auger process have been revealed both in the a.c. and d.c. characteristics of the Auger transistor.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
