Abstract
A simple analytical model of the tunnel MIS emitter transistor is developed, taking into account the Auger ionization effect. The proposed model predicts the features of DC performance of this device arising from Auger ionization. This model was then used to compute typical characteristics for an Al/SiO/sub 2//n-Si Auger transistor. Generated DC characteristics are in satisfactory agreement with recently published experimental results.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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