Abstract
The authors present results on the Hall effect in the Si inversion layer in the regime where the temperature dependence of the conductivity is due to corrections arising from the electron-electron interaction. They find that the temperature dependence of the Hall coefficient is independent of the magnitude of the magnetic field which does, however, have a pronounced effect on the temperature dependence of the conductivity. This is not explained by present theories, and suggests that whereas the effects of screening on the conductivity are well understood this is not the case with the Hall effect.
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