Abstract
We have investigated the photovoltaic action in a ferroelectric semiconductor SbSI with a potentiometry for a multiterminal device under local laser irradiation. The DC-voltage characteristics indicate that the device characteristics are understood to be equivalent to a series circuit composed of dark-resistances for the unirradiated parts and the parallel circuit of a current source and photo-resistance for the irradiated part. The results clearly guide us toward designing photovoltaic and photodetective devices based on ferroelectric materials.
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