Abstract
AbstractThe harmonic and intermodulation distortions of both fully‐depleted (FD) and partially‐depleted (PD) silicon‐on‐insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third‐order Volterra model of the MOSFET. This modelling helps us to understand the non‐linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large‐signal network analyser measurements. The devices performances are discussed. Copyright © 2005 John Wiley & Sons, Ltd.
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